This paper demonstrates a nextgeneration nonTSV 3D packaging architecture with small formfactors excellent electrical performance and reliability at low cost for highbandwidth applications High density LogicHBM integration today is built predominantly using 25D interposers which are fundamentally limited by long interconnect lengths and they also are expensive as the package sizes
LowCost NonTSV Based 3D Packaging Using Glass Panel Embedding GPE
25D Glass Panel Embedded GPE Packages with Better IO Density
25D Glass Panel Embedded GPE Packages with Better IO Density
Demo of pitchscaling and multidie integration on GPE Embedding Process 2 µm dieshift has been demonstrated before Process for 35 µm Microvia integration for 20 µm pitch chiptoPKG interconnects on Maskless Aligner has been established 25 µm lithography with 13 AR has been established on GPE substrates
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25D Glass Panel Embedded GPE Packages with Better IO Density Performance Cost and Reliability than Current Silicon Interposers and HighDensity FanOut Packages Conference Paper May 2018
The results clearly showed that GPE demonstrated better signal integrity at higher frequency and these losses became all the more critical with more RDL layers and viatransitions will receive an email with a link to First Demonstration of UltraThin Glass Panel Embedded GPE Package with Sheet Type Epoxy Molding Compound for 5Gmmwave
25d Glass Panel Embedded Gpe Packages With Better Io
25D Glass Panel Embedded GPE Packages with Better IO Density Performance Cost and Reliability than Current Silicon Interposers and HighDensity FanOut Packages Siddharth Ravichandran Shuhei Yamada Giback Park Hang Chen Tailong Shi C Buch Fuhan Liu V Smet V Sundaram R Tummala
First Demonstration of UltraThin Glass Panel Embedded GPE Package
Georgia Tech are shown in Fig 2 showing chipfirst glass panel embedding GPE 3D architecture for powerefficient highbandwidth computing Since the memory dies are assembled at fine pitch on embedded glass substrates the interconnects between the LogicGPU and the memory is shortened multifold 4 Such an architecture does not need
PDF Glass Panel Packaging as the Most LeadingEdge Packaging
This paper demonstrates for the first time a next generation highbandwidth 25D glass panel embedding GPE architecture with better IO density performance cost and reliability than silicon interposers and high density fanout packages for heterogeneous integration Silicon interposers were the first 25D technology to enter volume manufacturing first with TSVs as CoWoS by TSMC and later
PDF Characterization of ChiptoPackage Interconnects for Glass Panel
25d Glass Panel Embedded Gpe Packages With Better Io
interconnects achieve an average chiptopackage loss of 0146 dB in Dband and 0177 dB maximum loss at 170 GHz which is lower than current flipchip approaches and our objective is to incorporate such interconnects in the proposed GPE package Index Termsmicrovia Dband chiptopackage interconnect Glass Panel Embedding subTHz I
PDF 25D and 3D Glass Panel Embedding For High Performance Computing
Ultrathin panellevel glass fanout packages Daisychain test dies were used to emulate an embedded device with the size of 6469 mm 5902 mm thickness of 75 μm and pad pitch of 65 μm Glass panels with 70 μm thickness and throughglass cavities were first fabricated and then bonded onto a 50 μm thick glass panel carrier using
25D Glass Panel Embedded GPE Packages with Better IO Density Performance Cost and Reliability than Current Silicon Interposers and HighDensity FanOut Packages May 2018 DOI 101109ECTC
PDF Glass Panel Packaging As the Most Leadingedge Packaging Technologies
First Demonstration of Panel Glass FanOut GFO Packages for High IO